# A Compact Series-Connected SiC MOSFETs Module and Its Application in High Voltage Nanosecond Pulse Generator

**Authors:**  [Lei Pang](/content/authors/lei-pang-f439wz1obe/index.html), [Tianjun Long](/content/authors/tianjun-long-2mc68spqox/index.html), [Kun He](/content/authors/kun-he-4rxtvsqm1u/index.html), [Yongrui Huang](/content/authors/yongrui-huang-281hp00vdq/index.html), [Qiaogen Zhang](/content/authors/qiaogen-zhang-46xtqhyobl/index.html) +4 more

**Institution:** [Xi'an Jiaotong University](/content/institutions/xi-an-jiaotong-university-kezah7b0/index.html), [Electric Power Research Institute](/content/institutions/electric-power-research-institute-ja7kq814/index.html)

**Date of Publication:** 15 Jan 2019  
**Journal:** [IEEE Transactions on Industrial Electronics](/content/journals/ieee-transactions-on-industrial-electronics-364nx2x4/index.html)  
**Volume:** 66, **Issue:** 12, **Pages:** 9238-9247

## TL;DR  
A high voltage series-connected silicon carbide (SiC) metal-oxide-semiconductor field effect transistor (MOSFET) module which can be served as the main switch in a repetitive high-voltage nanosecond pulse generator.

## Abstract  
Nanosecond pulse discharge plasma has many prospects in industrial applications, and high-voltage repetitive nanosecond pulse generators with compact design and light weight have become one of the key issues limiting its development in some applications. This paper presents a high voltage series-connected silicon carbide (SiC) metal-oxide-semiconductor field effect transistor (MOSFET) module which can be served as the main switch in a repetitive high-voltage nanosecond pulse generator. This kind of series-connected MOSFET module with only a single external gate driver requiring very few components is very suitable for compact assembly. By analyzing the working principle, three topologies of the series-connected MOSFET module are proposed. The switching behaviors of the three different topologies with four SiC MOSFETs series-connected are compared experimentally. The variation of switching characteristics of series-connection SiC MOSFETs module with different numbers of devices are investigated. The layout is also optimized to shorten pulse front time and improve output pulse quality. Furthermore, a 10 kV SiC MOSFET module with a turn-on transition time ∼10 ns is developed. The double pulse test result demonstrates excellent switching performances. Finally, a compact and high-voltage pulse generator composed of three 10 kV SiC MOSFETs module is tailored, with a typical rise time ∼40 ns and peak voltage of ∼30 kV.

## Key Points  
- Presentation of a high-voltage SiC MOSFET module suitable for nanosecond pulse generators.
- Comparison of three different topologies for improved performance.
- Experimental validation of switching behaviors.
- Development of a compact pulse generator with stable output characteristics.