A Compact Series-Connected SiC MOSFETs Module and Its Application in High Voltage Nanosecond Pulse Generator (2019) | Lei Pang | 69 Citations

A Compact Series-Connected SiC MOSFETs Module and Its Application in High Voltage Nanosecond Pulse Generator

Authors: Lei Pang, Tianjun Long, Kun He, Yongrui Huang, Qiaogen Zhang +4 more

Institution: Xi'an Jiaotong University, Electric Power Research Institute

Date of Publication: 15 Jan 2019
Journal: IEEE Transactions on Industrial Electronics
Volume: 66, Issue: 12, Pages: 9238-9247

TL;DR

A high voltage series-connected silicon carbide (SiC) metal-oxide-semiconductor field effect transistor (MOSFET) module which can be served as the main switch in a repetitive high-voltage nanosecond pulse generator.

Abstract

Nanosecond pulse discharge plasma has many prospects in industrial applications, and high-voltage repetitive nanosecond pulse generators with compact design and light weight have become one of the key issues limiting its development in some applications. This paper presents a high voltage series-connected silicon carbide (SiC) metal-oxide-semiconductor field effect transistor (MOSFET) module which can be served as the main switch in a repetitive high-voltage nanosecond pulse generator. This kind of series-connected MOSFET module with only a single external gate driver requiring very few components is very suitable for compact assembly. By analyzing the working principle, three topologies of the series-connected MOSFET module are proposed. The switching behaviors of the three different topologies with four SiC MOSFETs series-connected are compared experimentally. The variation of switching characteristics of series-connection SiC MOSFETs module with different numbers of devices are investigated. The layout is also optimized to shorten pulse front time and improve output pulse quality. Furthermore, a 10 kV SiC MOSFET module with a turn-on transition time ∼10 ns is developed. The double pulse test result demonstrates excellent switching performances. Finally, a compact and high-voltage pulse generator composed of three 10 kV SiC MOSFETs module is tailored, with a typical rise time ∼40 ns and peak voltage of ∼30 kV.

Key Points